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IRF9910PBF Технические параметры

Infineon Technologies  IRF9910PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A 12A
Number of Elements 2 Elements
Turn Off Delay Time 15 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Voltage - Rated DC 20V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 10A
Base Part Number IRF9910PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.4m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 14ns
Fall Time (Typ) 7.5 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 2.55V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0093Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.55 V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF9910PBF Документы

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