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IRF9953PBF Технические параметры

Infineon Technologies  IRF9953PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Supplier Device Package 8-SO
Current - Continuous Drain (Id) @ 25℃ 2.3A
Number of Elements 2 Elements
Turn Off Delay Time 20 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 1997
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -30V
Max Power Dissipation 2W
Current Rating -2.3A
Base Part Number IRF9953PBF
Element Configuration Dual
Power Dissipation 2W
Turn On Delay Time 9.7 ns
Свойство продукта Значение свойства
Power - Max 2W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 6.9 ns
Continuous Drain Current (ID) -2.3A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Input Capacitance 190pF
FET Feature Standard
Drain to Source Resistance 250mOhm
Rds On Max 250 mΩ
Nominal Vgs -1 V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IRF9953PBF Документы

IRF9953PBF brand manufacturers: Infineon Technologies, Anli stock, IRF9953PBF reference price.Infineon Technologies. IRF9953PBF parameters, IRF9953PBF Datasheet PDF and pin diagram description download.You can use the IRF9953PBF Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IRF9953PBF pin diagram and circuit diagram and usage method of function,IRF9953PBF electronics tutorials.You can download from the Anli.