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IRF9956PBF Технические параметры

Infineon Technologies  IRF9956PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 13 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2003
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 100mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 30V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 3.5A
Base Part Number IRF9956PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 2W
Turn On Delay Time 6.2 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 8.8ns
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 3.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 16A
Avalanche Energy Rating (Eas) 44 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Height 1.5mm
Length 5mm
Width 4.05mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF9956PBF Документы

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