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IRFB31N20DPBF Технические параметры

Infineon Technologies  IRFB31N20DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 31A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.1W Ta 200W Tc
Turn Off Delay Time 26 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1998
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 82mOhm
Voltage - Rated DC 200V
Peak Reflow Temperature (Cel) 250
Current Rating 31A
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Rise Time 38ns
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 31A
Threshold Voltage 5.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 420 mJ
Recovery Time 300 ns
Nominal Vgs 5.5 V
Height 8.763mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRFB31N20DPBF Документы

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