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IRFB3256PBF Технические параметры

Infineon Technologies  IRFB3256PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 6.000006g
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 55 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Single
Number of Channels 1Channel
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 48V
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 77ns
Vgs (Max) ±20V
Fall Time (Typ) 64 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 4V
Drain to Source Breakdown Voltage 60V
Height 9.02mm
Length 10.67mm
Width 4.83mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFB3256PBF Документы

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