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IRFB3306GPBF Технические параметры

Infineon Technologies  IRFB3306GPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 230W Tc
Turn Off Delay Time 40 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2009
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4520pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 76ns
Vgs (Max) ±20V
Fall Time (Typ) 77 ns
Continuous Drain Current (ID) 160A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0042Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 620A
Nominal Vgs 4 V
Height 16.51mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

IRFB3306GPBF Документы

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