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IRFB4110PBF Технические параметры

Infineon Technologies  IRFB4110PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 370W Tc
Turn Off Delay Time 78 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Voltage - Rated DC 100V
Current Rating 180A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 370W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 67ns
Vgs (Max) ±20V
Fall Time (Typ) 88 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0045Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 670A
Dual Supply Voltage 100V
Recovery Time 75 ns
Nominal Vgs 4 V
Height 16.51mm
Length 10.66mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFB4110PBF Документы

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