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IRFB7430PBF Технические параметры

Infineon Technologies  IRFB7430PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 195A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 375W Tc
Turn Off Delay Time 160 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®, StrongIRFET™
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Case Connection DRAIN
Свойство продукта Значение свойства
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14240pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 460nC @ 10V
Rise Time 105ns
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 2.2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 760 mJ
Recovery Time 52 ns
Height 16.51mm
Length 10.67mm
Width 4.83mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFB7430PBF Документы

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