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IRFB7534PBF Технические параметры

Infineon Technologies  IRFB7534PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 195A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 294W Tc
Turn Off Delay Time 118 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®, StrongIRFET™
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 294W
Case Connection ISOLATED
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10034pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 279nC @ 10V
Rise Time 134ns
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Fall Time (Typ) 93 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 3.7V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0024Ohm
Pulsed Drain Current-Max (IDM) 944A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 775 mJ
Height 16.51mm
Length 10.67mm
Width 4.83mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFB7534PBF Документы

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