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IRFB7537PBF Технические параметры

Infineon Technologies  IRFB7537PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Turn Off Delay Time 82 ns
Power Dissipation (Max) 230W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Current - Continuous Drain (Id) @ 25℃ 173A Tc
Published 2008
Series HEXFET®, StrongIRFET™
Packaging Tube
Operating Temperature -55°C~175°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1Channel
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 105ns
Vgs (Max) ±20V
Fall Time (Typ) 84 ns
Continuous Drain Current (ID) 173A
Threshold Voltage 3.7V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 700A
Avalanche Energy Rating (Eas) 554 mJ
Width 4.83mm
Length 10.67mm
Height 16.51mm
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Lead Free Lead Free

IRFB7537PBF Документы

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