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IRFB7545PBF Технические параметры

Infineon Technologies  IRFB7545PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 6.000006g
Current - Continuous Drain (Id) @ 25℃ 95A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Power Dissipation (Max) 125W Tc
Turn Off Delay Time 44 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®, StrongIRFET™
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1Channel
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.9m Ω @ 57A, 10V
Vgs(th) (Max) @ Id 3.7V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4010pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 72ns
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Fall Time (Typ) 43 ns
Continuous Drain Current (ID) 95A
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 20V
Height 16.51mm
Length 10.67mm
Width 4.83mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFB7545PBF Документы

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