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IRFB7730PBF Технические параметры

Infineon Technologies  IRFB7730PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 6.000006g
Current - Continuous Drain (Id) @ 25℃ 195A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Power Dissipation (Max) 375W Tc
Turn Off Delay Time 180 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1Channel
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 375W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 407nC @ 10V
Rise Time 120ns
Vgs (Max) ±20V
Fall Time (Typ) 115 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Max Junction Temperature (Tj) 175°C
Height 19.8mm
Length 10.67mm
Width 4.83mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IRFB7730PBF Документы

IRFB7730PBF brand manufacturers: Infineon Technologies, Anli stock, IRFB7730PBF reference price.Infineon Technologies. IRFB7730PBF parameters, IRFB7730PBF Datasheet PDF and pin diagram description download.You can use the IRFB7730PBF Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRFB7730PBF pin diagram and circuit diagram and usage method of function,IRFB7730PBF electronics tutorials.You can download from the Anli.