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IRFH4201TRPBF Технические параметры

Infineon Technologies  IRFH4201TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 49A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.5W Ta 156W Tc
Turn Off Delay Time 24 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Position DUAL
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 0.95m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Rise Time 43ns
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 49A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 478 mJ
Height 900μm
Length 6mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRFH4201TRPBF Документы

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