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Infineon Technologies IRFH4213DTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 5Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 40A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3.6W Ta 96W Tc | |
| Turn Off Delay Time | 18 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2013 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Resistance | 1.35MOhm | |
| Element Configuration | Single | |
| Power Dissipation | 3.6W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Turn On Delay Time | 14 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 1.35m Ω @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 100μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3520pF @ 13V | |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V | |
| Rise Time | 30ns | |
| Drain to Source Voltage (Vdss) | 25V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 12 ns | |
| Continuous Drain Current (ID) | 40A | |
| Threshold Voltage | 1.6V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Height | 900μm | |
| Length | 6mm | |
| Width | 5mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |