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IRFH4213DTRPBF Технические параметры

Infineon Technologies  IRFH4213DTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 5Pins
Current - Continuous Drain (Id) @ 25℃ 40A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.6W Ta 96W Tc
Turn Off Delay Time 18 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 1.35MOhm
Element Configuration Single
Power Dissipation 3.6W
Свойство продукта Значение свойства
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.35m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3520pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Height 900μm
Length 6mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRFH4213DTRPBF Документы

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