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IRFH4253DTRPBF Технические параметры

Infineon Technologies  IRFH4253DTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 14 Weeks
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 8Pins
Number of Elements 2 Elements
Current - Continuous Drain (Id) @ 25℃ 64A 145A
Published 2013
Series HEXFET®
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 50W
Element Configuration Dual
Power - Max 31W 50W
Свойство продукта Значение свойства
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 3.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 1314pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 145A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 35A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Width 5mm
Length 6mm
Height 900μm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

IRFH4253DTRPBF Документы

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