[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IRFH5007TRPBF Технические параметры

Infineon Technologies  IRFH5007TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 17A Ta 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.6W Ta 156W Tc
Turn Off Delay Time 30 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Resistance 5.9MOhm
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 14ns
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 250 mJ
Nominal Vgs 2 V
Height 990.6μm
Length 6.1468mm
Width 5.15mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

IRFH5007TRPBF Документы

IRFH5007TRPBF brand manufacturers: Infineon Technologies, Anli stock, IRFH5007TRPBF reference price.Infineon Technologies. IRFH5007TRPBF parameters, IRFH5007TRPBF Datasheet PDF and pin diagram description download.You can use the IRFH5007TRPBF Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRFH5007TRPBF pin diagram and circuit diagram and usage method of function,IRFH5007TRPBF electronics tutorials.You can download from the Anli.