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Infineon Technologies IRFH5020TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 5.1A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3.6W Ta 8.3W Tc | |
| Turn Off Delay Time | 21 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 55MOhm | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | HIGH RELIABILITY | |
| Terminal Position | DUAL | |
| JESD-30 Code | R-PDSO-N5 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 3.6W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 9.3 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 7.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 150μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2290pF @ 100V | |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V | |
| Rise Time | 7.7ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 6 ns | |
| Continuous Drain Current (ID) | 5.1A | |
| Threshold Voltage | 5V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 43A | |
| Drain to Source Breakdown Voltage | 200V | |
| Pulsed Drain Current-Max (IDM) | 63A | |
| Avalanche Energy Rating (Eas) | 320 mJ | |
| Max Junction Temperature (Tj) | 150°C | |
| Height | 1.05mm | |
| Length | 6mm | |
| Width | 5mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |