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IRFH5300TRPBF Технические параметры

Infineon Technologies  IRFH5300TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 40A Ta 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.6W Ta 250W Tc
Turn Off Delay Time 31 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Resistance 1.4MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 30ns
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 420 mJ
Height 850μm
Length 6mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFH5300TRPBF Документы

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