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IRFH5302TR2PBF Технические параметры

Infineon Technologies  IRFH5302TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Supplier Device Package PQFN (5x6) Single Die
Current - Continuous Drain (Id) @ 25℃ 32A Ta 100A Tc
Number of Elements 1 Element
Turn Off Delay Time 22 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series HEXFET®
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Element Configuration Single
Power Dissipation 100W
Turn On Delay Time 18 ns
FET Type N-Channel
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Rise Time 51ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 4.4nF
Recovery Time 29 ns
Drain to Source Resistance 2.1mOhm
Rds On Max 2.1 mΩ
Nominal Vgs 1.8 V
Height 810μm
Length 5mm
Width 6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRFH5302TR2PBF Документы

IRFH5302TR2PBF brand manufacturers: Infineon Technologies, Anli stock, IRFH5302TR2PBF reference price.Infineon Technologies. IRFH5302TR2PBF parameters, IRFH5302TR2PBF Datasheet PDF and pin diagram description download.You can use the IRFH5302TR2PBF Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRFH5302TR2PBF pin diagram and circuit diagram and usage method of function,IRFH5302TR2PBF electronics tutorials.You can download from the Anli.