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IRFH5302TRPBF Технические параметры

Infineon Technologies  IRFH5302TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 32A Ta 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.6W Ta 100W Tc
Turn Off Delay Time 22 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Resistance 2.1MOhm
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Rise Time 51ns
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
Nominal Vgs 1.8 V
Height 838.2μm
Length 5.9944mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFH5302TRPBF Документы

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