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IRFH7085TRPBF Технические параметры

Infineon Technologies  IRFH7085TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 156W Tc
Turn Off Delay Time 63 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series StrongIRFET™
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N5
Number of Channels 1Channel
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 3.7V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6460pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Rise Time 25ns
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0032Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 590A
Avalanche Energy Rating (Eas) 554 mJ
Max Junction Temperature (Tj) 150°C
Height 950μm
Length 6.15mm
Width 5.15mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFH7085TRPBF Документы

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