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IRFH7185TRPBF Технические параметры

Infineon Technologies  IRFH7185TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 19A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.6W Ta 160W Tc
Turn Off Delay Time 14 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FASTIRFET™, HEXFET®
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Position DUAL
Base Part Number IRFH7185
JESD-30 Code R-PDSO-N5
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.6V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 9.9ns
Vgs (Max) ±20V
Fall Time (Typ) 3.9 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 3.6V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 260A
Avalanche Energy Rating (Eas) 360 mJ
Max Junction Temperature (Tj) 150°C
Height 950μm
Length 6.15mm
Width 5.15mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRFH7185TRPBF Документы

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