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IRFH7932TRPBF Технические параметры

Infineon Technologies  IRFH7932TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 24A Ta 104A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 3.4W Ta
Turn Off Delay Time 23 ns
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2008
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N3
Configuration SINGLE WITH BUILT-IN DIODE
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.4W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4270pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Rise Time 48ns
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 25A
Drain-source On Resistance-Max 0.0033Ohm
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.8 V
Height 939.8μm
Length 6.096mm
Width 5.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFH7932TRPBF Документы

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