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IRFH7936TR2PBF Технические параметры

Infineon Technologies  IRFH7936TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Supplier Device Package 8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25℃ 20A Ta 54A Tc
Turn Off Delay Time 19 ns
Packaging Cut Tape (CT)
Series HEXFET®
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 4.8MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.1W
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 17 ns
FET Type N-Channel
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.36nF
Recovery Time 21 ns
Drain to Source Resistance 4.8mOhm
Rds On Max 4.8 mΩ
Nominal Vgs 1.8 V
Height 950μm
Length 5.2324mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRFH7936TR2PBF Документы

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