Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies IRFH8311TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TQFN Exposed Pad | |
| Number of Pins | 8Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 32A Ta 169A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3.6W Ta 96W Tc | |
| Turn Off Delay Time | 21 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2007 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Configuration | Single | |
| Power Dissipation | 3.6W | |
| Turn On Delay Time | 21 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 2.1m Ω @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.35V @ 100μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4960pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V | |
| Rise Time | 26ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 12 ns | |
| Continuous Drain Current (ID) | 32A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 30V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |