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IRFH8324TR2PBF Технические параметры

Infineon Technologies  IRFH8324TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Supplier Device Package PQFN (5x6)
Current - Continuous Drain (Id) @ 25℃ 23A Ta 90A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.6W Ta 54W Tc
Turn Off Delay Time 14 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.1MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 13 ns
FET Type N-Channel
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 26ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.38nF
Recovery Time 24 ns
Drain to Source Resistance 4.1mOhm
Rds On Max 4.1 mΩ
Nominal Vgs 1.8 V
Height 1.17mm
Length 5.85mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRFH8324TR2PBF Документы

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