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IRFH8325TR2PBF Технические параметры

Infineon Technologies  IRFH8325TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Supplier Device Package PQFN (5x6)
Current - Continuous Drain (Id) @ 25℃ 21A Ta 82A Tc
Number of Elements 1 Element
Turn Off Delay Time 14 ns
Packaging Cut Tape (CT)
Series HEXFET®
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 5MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 12 ns
FET Type N-Channel
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2487pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 7.1 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.487nF
Recovery Time 24 ns
Drain to Source Resistance 5mOhm
Rds On Max 5 mΩ
Nominal Vgs 1.8 V
Height 1.17mm
Length 5.85mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRFH8325TR2PBF Документы

IRFH8325TR2PBF brand manufacturers: Infineon Technologies, Anli stock, IRFH8325TR2PBF reference price.Infineon Technologies. IRFH8325TR2PBF parameters, IRFH8325TR2PBF Datasheet PDF and pin diagram description download.You can use the IRFH8325TR2PBF Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRFH8325TR2PBF pin diagram and circuit diagram and usage method of function,IRFH8325TR2PBF electronics tutorials.You can download from the Anli.