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IRFHE4250DTRPBF Технические параметры

Infineon Technologies  IRFHE4250DTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 32-PowerWFQFN
Number of Pins 30Pins
Current - Continuous Drain (Id) @ 25℃ 86A 303A
Number of Elements 2 Elements
Turn Off Delay Time 24 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FASTIRFET™
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
ECCN Code EAR99
Max Power Dissipation 156W
Base Part Number IRFHE4250
Element Configuration Dual
Power Dissipation 156W
Свойство продукта Значение свойства
Turn On Delay Time 17 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 2.75m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 1735pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 54ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 303A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 16V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 900μm
Length 6mm
Width 5mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRFHE4250DTRPBF Документы

IRFHE4250DTRPBF brand manufacturers: Infineon Technologies, Anli stock, IRFHE4250DTRPBF reference price.Infineon Technologies. IRFHE4250DTRPBF parameters, IRFHE4250DTRPBF Datasheet PDF and pin diagram description download.You can use the IRFHE4250DTRPBF Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IRFHE4250DTRPBF pin diagram and circuit diagram and usage method of function,IRFHE4250DTRPBF electronics tutorials.You can download from the Anli.