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IRFHM3911TRPBF Технические параметры

Infineon Technologies  IRFHM3911TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.2A Ta 20A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.8W Ta 29W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Resistance 92mOhm
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 115m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id 4V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Continuous Drain Current (ID) 20A
Threshold Voltage 4V
Drain Current-Max (Abs) (ID) 3.2A
Pulsed Drain Current-Max (IDM) 36A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 41 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

IRFHM3911TRPBF Документы

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