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IRFHM792TRPBF Технические параметры

Infineon Technologies  IRFHM792TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 5.2 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 2.3W
Base Part Number IRFHM792PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 3.4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 195m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 251pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V
Rise Time 4.7ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 2.6 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.4A
Drain-source On Resistance-Max 0.195Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 14A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFHM792TRPBF Документы

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