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IRFHM831TRPBF Технические параметры

Infineon Technologies  IRFHM831TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 14A Ta 40A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta 27W Tc
Turn Off Delay Time 6.2 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Resistance 12.6MOhm
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 6.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.8m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 12ns
Vgs (Max) ±20V
Fall Time (Typ) 4.7 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 96A
Avalanche Energy Rating (Eas) 50 mJ
Nominal Vgs 1.8 V
Height 990.6μm
Length 3.2766mm
Width 3.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRFHM831TRPBF Документы

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