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IRFHM8363TRPBF Технические параметры

Infineon Technologies  IRFHM8363TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 12 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2013
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 2.7W
Base Part Number IRFHM8363PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.9m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1165pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 94ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 33 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0149Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 116A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.8 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFHM8363TRPBF Документы

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