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IRFI4019HG-117P Технические параметры

Infineon Technologies  IRFI4019HG-117P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Package / Case TO-220-5 Full Pack (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Number of Pins 5Pins
Transistor Element Material SILICON
Turn Off Delay Time 13 ns
Number of Elements 2 Elements
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Max Power Dissipation 18W
Terminal Position SINGLE
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 18W
Case Connection ISOLATED
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 6.6ns
Drain to Source Voltage (Vdss) 150V
Fall Time (Typ) 3.1 ns
Continuous Drain Current (ID) 8.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 34A
Avalanche Energy Rating (Eas) 77 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status RoHS Compliant
Radiation Hardening No
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IRFI4019HG-117P Документы

IRFI4019HG-117P brand manufacturers: Infineon Technologies, Anli stock, IRFI4019HG-117P reference price.Infineon Technologies. IRFI4019HG-117P parameters, IRFI4019HG-117P Datasheet PDF and pin diagram description download.You can use the IRFI4019HG-117P Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IRFI4019HG-117P pin diagram and circuit diagram and usage method of function,IRFI4019HG-117P electronics tutorials.You can download from the Anli.