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IRFI4020H-117P Технические параметры

Infineon Technologies  IRFI4020H-117P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-5 Full Pack
Number of Pins 5Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 18 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Resistance 100MOhm
Max Power Dissipation 21W
Terminal Position SINGLE
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 21W
Case Connection DRAIN
Turn On Delay Time 8.4 ns
FET Type 2 N-Channel (Dual)
Свойство продукта Значение свойства
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 100m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 200V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 9.1A
Threshold Voltage 4.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 36A
Avalanche Energy Rating (Eas) 130 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 110 ns
FET Feature Standard
Nominal Vgs 4.9 V
Height 9.02mm
Length 10.6172mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFI4020H-117P Документы

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