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IRFI4229PBF Технические параметры

Infineon Technologies  IRFI4229PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 19A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 46W Tc
Turn Off Delay Time 32 ns
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 46W
Case Connection ISOLATED
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 17ns
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 19A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.046Ohm
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 72A
Avalanche Energy Rating (Eas) 110 mJ
Height 9.8mm
Length 10.63mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

IRFI4229PBF Документы

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