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IRFI4321PBF Технические параметры

Infineon Technologies  IRFI4321PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 34A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 46W Tc
Turn Off Delay Time 27 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Voltage - Rated DC 150V
Peak Reflow Temperature (Cel) 260
Current Rating 34A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 46W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4440pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 29ns
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 34A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Height 9.8mm
Length 10.6172mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFI4321PBF Документы

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