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Infineon Technologies IRFI4410ZGPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220AB Full-Pak | |
| Current - Continuous Drain (Id) @ 25℃ | 43A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 47W Tc | |
| Turn Off Delay Time | 27 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2011 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 175°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -55°C | |
| Power Dissipation | 47W | |
| Turn On Delay Time | 23 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 26A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 150μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4910pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V | |
| Rise Time | 15ns | |
| Drain to Source Voltage (Vdss) | 100V | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 43 ns | |
| Continuous Drain Current (ID) | 43A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 100V | |
| Input Capacitance | 4.91nF | |
| Rds On Max | 9.3 mΩ | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |