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IRFI4510GPBF Технические параметры

Infineon Technologies  IRFI4510GPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 35A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 42W Tc
Turn Off Delay Time 54 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2008
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Configuration SINGLE WITH BUILT-IN DIODE
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection ISOLATED
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.5m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2998pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Rise Time 33ns
Vgs (Max) ±20V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 206 mJ
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFI4510GPBF Документы

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