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IRFP22N50APBFXKMA1 Технические параметры

Infineon Technologies  IRFP22N50APBFXKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25℃ 22A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 277W Tc
Operating Temperature -55°C~150°C TJ
Series HEXFET®
Part Status Not For New Designs
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 230m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant

IRFP22N50APBFXKMA1 Документы

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