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IRFP2907ZPBF Технические параметры

Infineon Technologies  IRFP2907ZPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 19 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 90A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 310W Tc
Turn Off Delay Time 97 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 4.5Ohm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 75V
Current Rating 90A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
Case Connection DRAIN
Свойство продукта Значение свойства
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 140ns
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Continuous Drain Current (ID) 90A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 170A
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 680A
Dual Supply Voltage 75V
Avalanche Energy Rating (Eas) 690 mJ
Recovery Time 61 ns
Nominal Vgs 4 V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFP2907ZPBF Документы

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