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IRFP4332PBF Технические параметры

Infineon Technologies  IRFP4332PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 57A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 360W Tc
Operating Temperature -40°C~175°C TJ
Packaging Bulk
Series HEXFET®
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 33MOhm
Additional Feature ULTRA LOW ON-RESISTANCE
Voltage - Rated DC 250V
Current Rating 57A
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 120mW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 57A
Threshold Voltage 5V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Dual Supply Voltage 250V
Recovery Time 290 ns
Nominal Vgs 5 V
Height 20.3mm
Length 15.875mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFP4332PBF Документы

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