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IRFP4368PBF Технические параметры

Infineon Technologies  IRFP4368PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 195A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 520W Tc
Turn Off Delay Time 170 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 1.85MOhm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 43 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.85m Ω @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 19230pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 570nC @ 10V
Rise Time 220ns
Vgs (Max) ±20V
Fall Time (Typ) 260 ns
Continuous Drain Current (ID) 350A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Dual Supply Voltage 75V
Recovery Time 200 ns
Nominal Vgs 4 V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFP4368PBF Документы

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