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IRFP4468PBF Технические параметры

Infineon Technologies  IRFP4468PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 195A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 520W Tc
Turn Off Delay Time 160 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 2.6MOhm
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Number of Channels 1Channel
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection DRAIN
Turn On Delay Time 52 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 180A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 19860pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 540nC @ 10V
Rise Time 230ns
Vgs (Max) ±20V
Fall Time (Typ) 260 ns
Continuous Drain Current (ID) 290A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 740 mJ
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Height 24.99mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFP4468PBF Документы

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