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IRFP4768PBF Технические параметры

Infineon Technologies  IRFP4768PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 93A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 520W Tc
Turn Off Delay Time 57 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 17.5MOhm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.5m Ω @ 56A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10880pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 160ns
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Continuous Drain Current (ID) 93A
Threshold Voltage 5V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Dual Supply Voltage 250V
Avalanche Energy Rating (Eas) 770 mJ
Nominal Vgs 5 V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFP4768PBF Документы

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