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IRFR1010ZTRPBF Технические параметры
Infineon Technologies IRFR1010ZTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 42A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 140W Tc | |
| Turn Off Delay Time | 42 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2010 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSSO-G2 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 140W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 17 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 7.5m Ω @ 42A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 100μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2840pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V | |
| Rise Time | 76ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 48 ns | |
| Continuous Drain Current (ID) | 91A | |
| JEDEC-95 Code | TO-252AA | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 42A | |
| Drain-source On Resistance-Max | 0.0075Ohm | |
| Drain to Source Breakdown Voltage | 55V | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Height | 2.3876mm | |
| Length | 6.7056mm | |
| Width | 6.22mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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