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Infineon Technologies IRFR12N25DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | D-Pak | |
| Current - Continuous Drain (Id) @ 25℃ | 14A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 144W Tc | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Resistance | 260Ohm | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 250V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 14A | |
| Power Dissipation | 144W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 8.4A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V | |
| Rise Time | 25ns | |
| Drain to Source Voltage (Vdss) | 250V | |
| Vgs (Max) | ±30V | |
| Continuous Drain Current (ID) | 14A | |
| Threshold Voltage | 5V | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 250V | |
| Dual Supply Voltage | 250V | |
| Input Capacitance | 810pF | |
| Rds On Max | 260 mΩ | |
| Nominal Vgs | 5 V | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |