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IRFR4510TRPBF Технические параметры

Infineon Technologies  IRFR4510TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 56A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 143W Tc
Turn Off Delay Time 42 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 143W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.9m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3031pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Fall Time (Typ) 34 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 3V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 252A
Nominal Vgs 3 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFR4510TRPBF Документы

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