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IRFR812PBF Технические параметры

Infineon Technologies  IRFR812PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Current - Continuous Drain (Id) @ 25℃ 3.6A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 78W Tc
Turn Off Delay Time 24 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Reach Compliance Code not_compliant
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 22ns
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Recovery Time 110 ns
Height 2.39mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Просмотр сходства

IRFR812PBF Документы

IRFR812PBF brand manufacturers: Infineon Technologies, Anli stock, IRFR812PBF reference price.Infineon Technologies. IRFR812PBF parameters, IRFR812PBF Datasheet PDF and pin diagram description download.You can use the IRFR812PBF Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRFR812PBF pin diagram and circuit diagram and usage method of function,IRFR812PBF electronics tutorials.You can download from the Anli.