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IRFR812TRPBF Технические параметры

Infineon Technologies  IRFR812TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.6A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 78W Tc
Turn Off Delay Time 24 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Resistance 2.2Ohm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
Свойство продукта Значение свойства
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 22ns
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 3.6A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFR812TRPBF Документы

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