Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies IRFR825PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 6A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 119W Tc | |
| Turn Off Delay Time | 30 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 119W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Turn On Delay Time | 8.5 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 1.3 Ω @ 3.7A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1346pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V | |
| Rise Time | 25ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 20 ns | |
| Continuous Drain Current (ID) | 6A | |
| Threshold Voltage | 3V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 6A | |
| Drain to Source Breakdown Voltage | 500V | |
| Recovery Time | 138 ns | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |